Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Express 3.0 x4 (NVMe) new and refurbished buy online low prices

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Pregled: Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

Pregled: Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

Pregled: Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

Samsung - MZ-V6E500BW - Samsung 960 EVO MZ-V6E500BW - 500 GB SSD - intern - M.2 2280 - PCI Expre

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Environmental Parameters
Max Operating Temperature:	70 °C
Min Operating Temperature:	0 °C
Shock Tolerance (non-operating):	1500 g @ 0.5 ms

Expansion & Connectivity
Compatible Bay:	M.2 2280
Interfaces:	1 x PCI Express 3.0 x4 (NVMe) - M.2 Card

General
Capacity:	500 GB
Depth:	80 mm
Device Type:	Solid state drive - internal
Encryption Algorithm:	256-bit AES
Features:	TRIM support, sleep mode, Auto Garbage Collection Algorithm, TurboWrite Technology, V-NAND Technology, eDrive, NVM Express (NVMe), S.M.A.R.T., 256-bit AES, IEEE 1667
Form Factor:	M.2 2280
Hardware Encryption:	Yes
Height:	2.28 mm
Interface:	PCI Express 3.0 x4 (NVMe)
NAND Flash Memory Type:	Triple-level cell (TLC)
Weight:	9 g
Width:	22.1 mm

Performance
Internal Data Rate:	3200 MBps (read) / 1800 MBps (write)
Maximum 4KB Random Read:	330000 IOPS
Maximum 4KB Random Write:	330000 IOPS
SSD Endurance:	200 TB

Power
Power Consumption:	1.2 Watt (idle) ¦ 5.4 Watt (average) ¦ 5 mW (sleep)

Reliability
MTBF:	1,500,000 hours

Software & System Requirements
Software Included:	Samsung Magician Software

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