MZ-77Q4T0BW - 870 QVO MZ-77Q4T0BW - 4 TB SSD - intern - 2.5" (6.4 cm)

Artikelnummer: 10239323

870 QVO MZ-77Q4T0BW - 4 TB SSD - intern - 2.5" (6.4 cm)

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870 QVO MZ-77Q4T0BW - 4 TB SSD - intern - 2.5" (6.4 cm)

Produktinformationen:

Highlights
HDD/SSD Gbps:	6Gbps
HDD/SSD Anschluss:	SATA HDD
HDD/SSD Formfaktor:	2.5" SFF
HDD/SSD Kapazität:	4TB
General
Device Type:	Solid state drive - internal
Capacity:	4 TB
Hardware Encryption:	Yes
Encryption Algorithm:	256-bit AES
NAND Flash Memory Type:	Quad-level cell (QLC)
Form Factor:	2.5"
Interface:	SATA 6Gb/s
Buffer Size:	4 GB
Features:	TRIM support, Garbage Collection technology, sleep mode, TurboWrite Technology, V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667
Width:	69.85 mm
Depth:	100 mm
Height:	6.8 mm
Weight:	54 g
Performance
SSD Endurance:	1.44 PB
Internal Data Rate:	560 MBps (read) / 530 MBps (write)
4KB Random Read:	11000 IOPS
4KB Random Write:	35000 IOPS
Maximum 4KB Random Write:	88000 IOPS
Maximum 4KB Random Read:	98000 IOPS
Reliability
MTBF:	1,500,000 hours
Expansion & Connectivity
Interfaces:	1 x SATA 6 Gb/s - 7 pin Serial ATA
Compatible Bay:	2.5"
Power
Power Consumption:	3.3 Watt (average) ¦ 5.5 Watt (maximum) ¦ 0.045 Watt (idle)
Environmental Parameters
Min Operating Temperature:	0 °C
Max Operating Temperature:	70 °C
Shock Tolerance (operating):	0.5 ms half-sine
Shock Tolerance (non-operating):	1500 g @ 0.5 ms
General
Device Type:	Solid state drive - internal
Capacity:	4 TB
Hardware Encryption:	Yes
Encryption Algorithm:	256-bit AES
NAND Flash Memory Type:	Quad-level cell (QLC)
Form Factor:	2.5"
Interface:	SATA 6Gb/s
Buffer Size:	4 GB
Features:	TRIM support, Garbage Collection technology, sleep mode, TurboWrite Technology, V-NAND Technology, Low Power DDR4 SDRAM Cache, Samsung MKX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667
Width:	69.85 mm
Depth:	100 mm
Height:	6.8 mm
Weight:	54 g
Performance
SSD Endurance:	1.44 PB
Internal Data Rate:	560 MBps (read) / 530 MBps (write)
4KB Random Read:	11000 IOPS
4KB Random Write:	35000 IOPS
Maximum 4KB Random Write:	88000 IOPS
Maximum 4KB Random Read:	98000 IOPS
Reliability
MTBF:	1,500,000 hours
Expansion & Connectivity
Interfaces:	1 x SATA 6 Gb/s - 7 pin Serial ATA
Compatible Bay:	2.5"
Power
Power Consumption:	3.3 Watt (average) ¦ 5.5 Watt (maximum) ¦ 0.045 Watt (idle)
Environmental Parameters
Min Operating Temperature:	0 °C
Max Operating Temperature:	70 °C
Shock Tolerance (operating):	0.5 ms half-sine
Shock Tolerance (non-operating):	1500 g @ 0.5 ms

Herstellerinformationen:
Samsung Electronics GmbH
Frankfurter Straße, 2
65760 , Eschborn , Hessen , Deutschland
kundenbetreuung@samsung.de
https://www.samsung.com/de/info/imprint/

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